Enhanced photoluminescence and heterojunction characteristics of pulsed laser deposited ZnO nanostructures

We report on the growth of ZnO nanostructures in different gas ambient (Ar and N2) using pulsed laser deposition technique. Despite the similar growth temperature, use of N2 ambient gas resulted in well-aligned nanorods with flat surface at the tip, whereas, nanorods grown with Ar ambient exhibited tapered tips. The Nanorods grown under N2 ambient exhibited additional Raman modes corresponding to N induced zinc interstitials. The nanorods are c-axis oriented and highly epitaxial in nature. Photoluminescence spectroscopy reveals that the UV emission can be significantly enhanced by 10 times for the nanorods grown under Ar ambient. The enhanced UV emission is attributed to the reduction in polarization electric field along the c-axis. n-ZnO nanorods/p-Si heterojunction showed rectifying I–V characteristics with a turn of voltage of 3.4 V.