Performance Analysis of Double Material Gate (DG) -TFET with Channel Doping

Double Material Gate (DG) Tunnel Field Effect Transistor (TFET) is proposed in this paper with current semiconductor materials
analogous to Silicon dioxide (Sio2) and Hafnium Oxide (Hfo2) in 5 nm regime with symmetrical Gate to resolve the challenges of
TFET in terms of low on current. This advanced structure contributes better current controllability in the device related to
conventional Tunnel FET for the band to band tunneling (BTBT) mechanism. The double gate (DG) with two different
semiconductor materials will reduce the leakage current meantime to increase the drain current (Id) and transconductance (Gd) attribute of the device substantially. The characteristics of DG-TFET are considered by studying the electric field, potential, absolute net doping with the same work function using the Silvaco ATLAS device simulator. The symmetrical gate structure of DG-TFET is designed with a 5 nm regime. Thus, significant improvement of on/Off current ratio and on current becomes 3 times increased in comparison with typical TFET.