Simulation Based Investigation of Triple Heterojunction TFET (THJ-TFET) for Low Power Applications

We designed a new model tunnel feld-efect transistor (TFET) based on Triple Heterojunction Tunnel Field Efect Transistor
(THJ-TFET) is investigated and designed in this paper. This structure has a complex body with a metal oxide semiconductor
feld efect transistor. The integral switching mechanism of Triple Heterojunction TFET difers from conventional TFET
and its construction, analytical modeling, and BTBT operations are well suitable for low power electronics. Here triple het�erojunction (THJ) tunnel feld-efect transistor (THJ-TFET) has been recommended to fnd the solution for less power usage
test for new designs. The Triple Hetero junction TFET device is made up of semiconductors like silicon (Si), Silicon Dioxide
(SiO2), Hafnium Oxide (HfO2), and Titanium Dioxide (TiO2) materials are very potential. The Triple Hetero Junction-Tunnel
FET device layout with 60 nanometers dimensions and an overall gate length of 5 nm technology is used for the designing
of the proposed device (THJ-TFET). The THJ-TFET structure is invented using the TCAD tool with a channel length of
5 nm innovations. Hence Triple Hetero Junction TFET device achieved 5% more drain current (Ion) and has calibrated all
the analog parameters and RF parameters.